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?2011 silicon storage technology, inc. s71428-01-000 01/11 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? small package size ? high linear output power: ? 802.11a ofdm spectrum mask compliance up to 23 dbm ? added evm~2.5% up to 18 dbm, typically, across 5.1-5.8 ghz for 54 mbps 802.11a signal ? high power-added efficiency/low operating current for 54 mbps 802.11a applications ? ~11% @ p out = 19 dbm for 54 mbps ? gain: ? typically 26 db gain across broadband 4.9-5.8 ghz ? low idle current ? ~120 ma i cq ? high speed power-up/-down ? turn on/off time (10%~90%) <100 ns ? low shut-down current (<1 a) ? on-chip power detection ? 20 db dynamic range on-chip power detection ?50 on-chip input matching and simple output matching ? packages available ? 12-contact uqfn (2mm x 2mm x 0.6mm max thickness) applications: ? wlan (ieee 802.11a/n) ? japan wlan ? hyperlan2 ? multimedia product description the SST11CP15 is a high-linearity power amplifier that has low power consumption and is based on the highly-reliable ingap/gaas hbt technology. the SST11CP15 can be easily configured for high-linearity, high-efficiency applications with superb power-added effi - ciency while operating over the entire 802.11a frequency band for u.s., european, and japanese markets (4.9-5.8 ghz). the SST11CP15 has excellent linearity, typically ~2.5% added evm at 18 dbm output power which is essential for 54 mbps 802.11a operation while meeting 802.11a spec - trum mask at 23 dbm. SST11CP15 also has wide-range, single-ended power detectors which lower users? cost on power control. the power amplifier ic also features easy board-level usage along with high-speed power-up/down control. low reference current (total i ref <5 ma) makes the SST11CP15 controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operating current make the SST11CP15 ideal for the final stage power amplification in battery-powered 802.11a wlan transmitter and access point applications. the SST11CP15 is off ered in 12-contact uqfn package with 0.6 mm maximum thickness. see figure 2 for pin assignments and table 1 for pin descriptions. 4.9-5.8 ghz high-linearity power amplifier SST11CP15
2 data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 ?2011 silicon storage technology, inc. s71428-01-000 01/11 functional blocks figure 1: functional block diagram 1 1428 b1.0 2 3 9 8 7 12 11 10 456 rfin vccb vref1 vref2 vref3 det nc rfout gnd vcc3 vcc2 vcc1 input match bias control power detection
data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 3 ?2011 silicon storage technology, inc. s71428-01-000 01/11 pin assignments figure 2: pin assignments for 12-contact uqfn pin descriptions table 1: pin description symbol gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. rfin 1 i rf input, dc decoupled vccb 2 power supply pwr supply voltage for bias circuit vref1 3 pwr current control vref2 4 pwr current control vref3 5 pwr current control det 6 o on-chip power detector nc 7 no connection unconnected pin rfout 8 o rf output gnd 9 ground ground (nc is acceptable) vcc3 10 power supply pwr power supply, 3 rd stage vcc2 11 power supply pwr power supply, 2 nd stage vcc1 12 power supply pwr power supply, 1 st stage t1.1 1428 pin no. pin name type 1 1. i=input, o=output function 1 1428 p1.0 2 3 9 8 7 12 11 10 456 rfin vccb vref1 vref2 vref3 det nc rfout gnd vcc3 vcc2 vcc1 top view (contacts facing down) rf and dc gnd 0
4 data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 ?2011 silicon storage technology, inc. s71428-01-000 01/11 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec - ifications. refer to figures 3 through 8 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) o perating r ange range industrial -10c to +85c 3.3v table 2: dc electrical characteristics min. typ max. unit notes v cc supply voltage at pins 2, 10, 11, 12 2.7 3.3 4.2 v i cc supply current @ p out = 18 dbm at v cc = 3.3v 210 ma i cq v cc quiescent current 120 ma i off shut down current <1.0 a v reg reference voltage for recommended application 2.85 v t2.0 1428 table 3: ac electrical characteristics for configuration symbol parameter f l-u frequency range 4.9 5.8 ghz linearity output power with 2.5% evm at 54 mbps ofdm signal when operating at 3.3v v cc 18 20 dbm output power level with 802.11a mask compliance across 4.9-5.8 ghz 23 dbm g linear gain across 4.9~5.8ghz 26 db det power detector output voltage range 0.3 1.7 v 2f, 3f, 4f, 5f harmonics at 22 dbm, without trapping capacitors -40 dbc t3.1 1428 supply voltage at pins 2, 10, 11, 12 (v cc ).............................................. -0.3v to +5.5v dc supply current (i cc ) .................................................................500ma operating temperature (t a ) ....................................................... -20oc to +85oc storage temperature (t stg )...................................................... -40oc to +120oc maximum junction temperature (t j )....................................................... +150oc maximum output power .................................................................27dbm surface mount solder reflow temperature ....................................... 260c for 10 seconds ambient temp v cc symbol parameter min typ max unit
data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 5 ?2011 silicon storage technology, inc. s71428-01-000 01/11 typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, v reg = 2.85v unless otherwise noted evm for 54 mbps operation figure 3: evm versus output power figure 4: power supply current versus output power 1428 f4.1 evm versus output power 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 output power (dbm) evm (%) freq=4.9 ghz freq=5.1 ghz freq=5.5 ghz freq=5.825 ghz 1428 f5.1 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 0 1 2 3 4 5 6 7 8 9 101112131415161718192021 supply current (ma) output power (dbm) supply current versus output power freq=4.9 ghz freg=5.1 ghz freq=5.5 ghz freq=5.825 ghz
6 data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 ?2011 silicon storage technology, inc. s71428-01-000 01/11 figure 5: power gain versus output power maximum mask compliance figure 6: frequency = 5.5 ghz at p out = 23.3 dbm with i cc = 390 ma 1428 f7.1 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 10 11 12 13 14 15 16 17 18 19 20 21 power gain (db) output power (dbm) power gain versus output power freq=4.9 ghz freg=5.1 ghz freq=5.5 ghz freq=5.825 ghz 1428 f6.0 spectrum mask 802.11a (5500mhz) -80 -70 -60 -50 -40 -30 -20 -10 0 5.45 5.55 frequency(ghz) amplitude(db) spectrum relative limit 5.5
data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 7 ?2011 silicon storage technology, inc. s71428-01-000 01/11 figure 7: detector voltage vs output power figure 8: pae vs output power 1428 f8.1 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 detector voltage (v) output power (dbm) detector voltage versus output power freq=4.9 ghz freq=5.5 ghz freq=5.5 ghz freq=5.825 ghz 1428 f9.1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0123456789101112131415161718192021 pae (%) output power (dbm) pae versus output power freq=4.9 ghz freg=5.1 ghz freq=5.5 ghz freq=5.825 ghz
8 data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 ?2011 silicon storage technology, inc. s71428-01-000 01/11 figure 9: s-parameters 1428 s-parms.1.0 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 frequency (ghz) s12 (db) s11 versus frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 frequency (ghz) s11 (db) -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s22 versus frequency frequency (ghz) s22 (db) s21 versus frequency frequency (ghz) s21 (db)
data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 9 ?2011 silicon storage technology, inc. s71428-01-000 01/11 figure 10: typical application for high-linearity 802.11a/n application (v cc = 3.3v, v reg =2.85v) 1428 f11.1 1 2 3 9 8 7 12 11 10 456 50 rfin 50 35 mil from the edge of the package 0 105 det vreg 68 test conditions v reg = 2.85v v cc =vccb=3.3v 0.7 pf 0.1 f 0.1 pf rfout vcc 4.7 f 0.1 f 0.1 f 200 pf 11cp15 2x2 12l uqfn top view vccb 0.1 f note: the SST11CP15 has on-chip dc-blocking caps for rf ports
10 data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 ?2011 silicon storage technology, inc. s71428-01-000 01/11 product ordering information valid combinations for SST11CP15 SST11CP15 -qube SST11CP15 evaluation kits SST11CP15 -qube-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations. sst11cp 15 - qub e sst xxc p x x- xx x environmental attribute e 1 = non-pb contact (lead) finish package modifier b = 12 contact package type qu = uqfn product family identifier product type p = power amplifier voltage c = 3.0-5.0v frequency of operation 1 = 4.9-5.8 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 4.9-5.8 ghz high-linearity power amplifier SST11CP15 11 ?2011 silicon storage technology, inc. s71428-01-000 01/11 packaging diagrams figure 11: 12-contact ultra-thin quad flat no-lead (uqfn) sst package code: qub table 4: revision history 00 jul 2010 01 jan 2011 revision description date ? initial release of data sheet ? updated features on page 1; table 2 on page 4; and figures 3-5, 7,8, and 10. 12-uqfn-2x2-qub-1.0 0.4 bsc see notes 2 and 3 pin 1 0.25 0.15 0.92 0.34 0.24 pin 1 (laser engraved) top view bottom view side view 1mm 0.265 0.165 2.00 0.05 2.00 0.05 0.075 note 1. similar to jedec jep95 uqfn/uson variants, though number of contacts and some dimensions are different. 2. from the bottom view, the pin 1 in dicator may be either a curved indent or a 45-degree chamfer. 3. the external paddle is electrically connected to the die back-side and to v ss . this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 0.60 0.50 0.05 max silicon storage technology, inc. www.superflash.com or www.sst.com

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